Semiconductor Physics and Diodes MCQs
Practice free Semiconductor Physics and Diodes multiple-choice questions with instant answer feedback and step-by-step solutions. Click an option to check yourself, reveal the full explanation, and work through all 194 questions — no login required.
Question 181easy
In an abrupt p-n junction, the doping concentrations on the p-side and n-side are NA = 9 x 1016/cm3 and ND = 1 X 1016/ CM3 respectively. The p-n junction is reverse biased and the total depletion width is 3 pm. The depletion width on the p-side is
Question 182easy
The resistivity of a uniformly doped n-type silicon sample is 0.5 a-cm. If the electron mobility (N) is 1250 cm2N-sec and the charge of an electron is 1.6 x 10-19 Coulomb, the donor impurity concentration (ND) in the sample is
Question 183easy
The bandgap of Silicon at room temperature is
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Question 184easy
A Silicon PN junction at a temperature of 20?C has a reverse saturation current of 10 pico-Amperes (pA). The reverse saturation current at 40?C for the same bias is approximately
Question 185easy
The primary reason for the widespread use of Silicon in semiconductor device technology is
Question 186easy
Refractive index of glass is 1.5. Find the wavelength of a beam of light with a frequency of 1014 Hz in glass. Assume velocity of light is 3 x 108 m/s in vacuum.
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Question 187easy
A Silicon sample A is doped with 1018 atoms/cm3 of Boron. Another sample B of identical dimensions is doped with 1018 atoms/cm3 of Phosphorus. The ratio of electron to hole mobility is 3. The ratio of conductivity of the sample A to B is
Question 188easy
A Silicon PN junction diode under reverse bias has depletion region of width 10am. The relative permittivity of Silicon, Cr = 11.7 and the permittiveity of free space Co = 8.85 x 10-12 F/m. The depletion capacitance of the diode per square meter is
Question 189easy
The concentration of minority carriers in an extrinsic semiconductor under equilibrium is