Power Semiconductor Devices and Their Applications MCQs
Practice free Power Semiconductor Devices and Their Applications multiple-choice questions with instant answer feedback and step-by-step solutions. Click an option to check yourself, reveal the full explanation, and work through all 224 questions — no login required.
Question 217easy
Which of the following regulator can provide output voltage more than or less than the input voltage? I. Buck regulator II. Boost regulator III. Buck-boost regulator IV. Cuk regulator
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Question 220easy
Consider the following statements SI and S2 Si: The threshold voltage (VT) of a MOS capacitor decreases with increase in gate oxide thickness S2 : The threshold voltage (VT) of a MOS capacitor decreases with increase in substrate doping concentration Which one of the following is correct?
Question 221easy
The drain of an n-channel MOSFET is shorted to the gate so that VGS = YDS? The threshold voltage (VT) of MOSFET is 1 V. If the drain current (ID) is 1 mA for 'GS = 2 V, then for VGs = 3 V, ID is
Question 222easy
A MOS capacitor made using p type substrade is in the accumulation mode. The dominant charge in the channel is due to the presence of
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Question 223easy
An n-channel depletion MOSFET has following two points on its ID - VGS curve (i) 'GS = Oat ID =12 mA and (ii) VGs = -6 Volts at ID = 0 Which of the following Q-points will give the highest trans-conductance gain for small signals?
Question 224easy
Consider the following statements about the C-V characteristics plot : Si : The MOS capacitor has an n-type substrate. S2 : If positive charges are introduced in the oxide, the C-V plot will shift to the left. Then which of the following is true?