Bipolar Junction Transistor MCQs

A transistor is said to be in quiescent state when

The most noticeable effect of a small increase in temperature in the CE transistor is the

If for a silicon n-p-n transistor, the base-to-emitter voltage (VBE) is 0.7 V and the collector-to-base voltage (VcB) is 0.2 V, then the transistor is operating in the

Consider the following statements Si and S2. SI : The 13 of a bipolar transistor reduces if the base width is increased. S2 : The of a bipolar transistor increases if the doping concentration in the base is increased. Which one of the following is correct?

Consider an abrupt p-junction. Let V!,i be the built-in potential of this junction and VII be the applied reverse bias. If the junction capacitance (Cj) is 1 pF for Vbi + VR = 1V, then for V . + VR = 4V 9 C. will be

The neutral base width of a bipolar transistor, biased in the active region, is 0.5 gm. The maximum electron concentration and the diffusion constant in the base are I014/cm3 and Dn = 25 cm2/sec respectively. Assuming negligible recombination in the base, the collector current density is (the electron charge is 1.6 x 10-19 coulomb)

A bipolar transistor is operating in the active region with a collector current of I mA. Assuming that the 13 of the transistor is 100 and the thermal voltage (VT) is 25 mV, the transconductance (gm) and the input resistance (rx) of the transistor in the common emitter configuration, are

The phenomenon known as "Early Effect" in a bipolar transistor refers to a reduction of the effective base width caused by

The DC current gain (P) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is